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winbond w25n512gveir


512Mb QspiNAND Flash 166MHz SON8




Attribute Value
2.7 ~ 3.6V
SON - 8


The W25N512GV, a 512M-bit Serial SLC NAND Flash Memory, by Winbond provides a comprehensive storage solution for systems with limited space, pins, and power. This product belongs to the W25N SpiFlash family, which incorporates the popular SPI interface and the traditional large NAND non-volatile memory space. Its primary applications include code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP), and storing voice, text, and data.

Function & Applications

W25N512GV is designed for efficient and high-performance storage in various applications. Its potential uses extend from code shadowing, in which code stored in flash is transferred to DRAM for faster execution, to providing error-free memory through built-in ECC (Error Correcting Code). This NAND Flash Memory is ideal for systems requiring rapid data transfer, continuous read, and support for Executive-in-Place (XiP) functionality. W25N512GV supports the standard SPI, dual SPI, and quad SPI, allowing for increased flexibility and greater adaptability to different system configurations.

Performance Parameters

This QspiNAND Flash offers a high-performance rate with a clock frequency of up to 166MHz, a continuous data transfer rate of up 50MB/s, and a 10-year data retention period. It consumes low levels of power, with current consumption as low as 25mA active, 10µA for standby, and 1µA for deep power down. It operates at a single 2.7V to 3.6V power supply and has a wide temperature range from -40℃ to +85/105℃, depending on the package.

Package Types, Interface & Pin Configuration

W25N512GV is available in various space-saving package types, such as 8-pad WSON (6x5-mm and 8x6-mm), 16-pin SOIC 300-mil, and 24-ball TFBGA (8x6-mm). These packages provide opportunities for seamless integration in systems where traditional NAND flash memory might be difficult to fit. The product supports interfaces, such as CLK, /CS, DI, DO, /WP, and /Hold for greater control flexibility.

Reliability & Lifespan

This NAND flash memory has a 100,000 erase/program cycle lifespan and comes with built-in ECC (Error Correcting Code) for detecting and correcting errors in memory locations. It also offers bad block management, which ensures contiguous good memory and better manageability of the flash memory.

Standards & Certifications

W25N512GV adheres to JEDEC standard manufacturer and device ID specifications. It also supports unique ID pages, parameter pages, and ten 2,048-Byte OTP (One-Time Programmable) pages. Moreover, it features advanced security functions, such as software and hardware write protection, power supply lock-down, and OTP protection.

Application Cases & Reference Designs

Winbond's W25N512GV NAND Flash Memory caters to a wide range of applications that can benefit from increased storage, reduced power consumption, and improved efficiency. It's suitable for use in embedded systems and industrial applications, and any system requiring rapid data transfer or code shadowing to DRAM. The continuous read functionality assures fast code transfers from the NAND to the processor in these applications, thus enhancing overall system performance.




Product Feature 1

Page Read Time with ECC Enable: 50us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Support OTP Memory Area

Packaging *

Out of stock

MOQ: 1 / MPQ: 1

QuantityUnit Price
1USD 1.46000
100USD 1.37000
1,000USD 1.27000
20,001 +Quote by quantity
Technical Documentation