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winbond w25n01kvzeir

W25N01KVZEIR

1Gb QspiNAND Flash 104MHz SON8

Supplier:

Winbond

Certification:

certcert
Specification
Attribute Value
Density
1Gb
Frequency
104MHz
Temperature
-40~+85˚C
Dimension
8X6mm2
Voltage
2.7 ~ 3.6V
Package
SON - 8
Description

Introduction:

The W25N01KV is a 1G-bit Single-Level Cell (SLC) QspiNAND Flash Memory designed by Winbond. This advanced memory solution comes in a compact size and offers robust performance under limited space, pins, and power. The device is part of the W25N QspiNAND family, which combines the advantageous features of the SPI interface and the traditional large NAND non-volatile memory space.

Function & Applications:

The W25N01KV is well-suited for code shadowing to RAM, marking it as a reliable candidate for most computing systems. It comes with a single power supply operating at 2.7V to 3.6V and consumes as low as 25mA in active mode and 10µA for standby. The device is designed to provide efficient memory management, facilitated by user-configurable internal ECC.

This advanced memory solution finds its utility in a wide range of industrial applications. Given its high efficiency and cost-effectiveness in systems with densities above 512Mb, it is a preferred choice for scalable storage solutions.

Performance Parameters:

The device operates at a frequency of 104MHz and supports the standard Serial Peripheral Interface (SPI), Dual/Quad I/O SPI. This translates into equivalent clock rates of 208MHz for Dual I/O and 416MHz for Quad I/O using the Fast Read Dual/Quad I/O instructions.

The device also features a fast program/erase performance with up to 60,000 erase/program cycles and offers 10 years of data retention.

Package Types, Interface & Pin Configuration:

For better space management, the W25N01KV devices are packaged in compact 8-pad WSON 6x5-mm and 8x6-mm options. The device supports SPI, Dual, and Quad SPI with a standard CLK, /CS, DI, DO, /WP, /Hold interface configuration. Further, the device comes with a unique ID and parameter pages, along with ten 2KB OTP pages.

Reliability & Lifespan:

With 60,000 program/erase cycles and 10-year data retention capability, the W25N01KV offers long-term reliability and an extended lifespan. It operates within a wide temperature range from -40°C to +85°C, ensuring robust performance under varying environmental conditions.

Standards & Certifications:

The W25N01KV adheres to JEDEC standard manufacturer and device ID, indicating its compliance with industry standards. The inclusion of on-chip 4-Bit ECC and ECC status bits to indicate ECC results further enhances its efficiency and reliability.

Application Cases & Reference Designs:

Due to its features like code shadowing and continuous read functionality, the W25N01KV excels in applications that require quick data transfer between the flash and DRAM. Its built-in ECC capability ensures seamless error correction and bad block management, thereby enhancing the overall system efficiency.

The device's advanced features, such as on-chip 4-Bit ECC, software and hardware write-protect, and OTP protection, make it a reliable choice for diverse applications.

Features

Product Feature 1

Page Read Time with ECC Enable: 60us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Support OTP Memory Area

Packaging *

In Stock: 3

MOQ: 1 / MPQ: 1

Total USD 2.01
QuantityUnit Price
1USD 2.01000
100USD 1.89000
1,000USD 1.75000
20,001 +Quote by quantity
Technical Documentation